Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth

Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template

Coaxial GaN/InGaN/GaN Nano-Heterostructures

The optimization of the epitaxial quality and ordering of coaxial GaN/InGaN/GaN nanoheterostructures is the main focus of this study. Two approaches for the realization of upright ZnO nanipillars, used as templates for the epitaxially grown GaN layers, with their respective degrees of pattern arrangement are introduced. Consequently, the growth of coaxial GaN/InGaN/GaN quantum wells (for three ...

GaN growth on porous silicon by MOVPE

GaN films have been grown at 1050 8C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 8C during 10 min under a mixture of ammonia (NH3) and hydrogen (H2). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN gr...

Growth and characterization of SiC and GaN

At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. High-quality substrates will significantly improve device performance and yield. One of the aims of the...

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward v...